Semiconductor system assemblies and methods of operation

ABSTRACT

An exemplary semiconductor processing system may include a remote plasma source coupled with a processing chamber having a top plate. An inlet assembly may be used to couple the remote plasma source with the top plate and may include a mounting assembly, which in embodiments may include at least two components. The inlet assembly may further include a precursor distribution assembly defining a plurality of distribution channels fluidly coupled with an injection port.

CROSS-REFERENCES TO RELATED APPLICATIONS

This Application is related to U.S. application Ser. No. 14/108,683entitled “SEMICONDUCTOR SYSTEM ASSEMBLIES AND METHODS OF OPERATION,” andU.S. application Ser. No. 14/108,719 entitled “SEMICONDUCTOR SYSTEMASSEMBLIES AND METHODS OF OPERATION,” all of which are being filedconcurrently on Dec. 17, 2013, the entire disclosures of which arehereby incorporated by reference for all purposes.

TECHNICAL FIELD

The present technology relates to semiconductor systems, processes, andequipment. More specifically, the present technology relates to systemsand methods for reducing film contamination and equipment degradation.

BACKGROUND

Integrated circuits are made possible by processes which produceintricately patterned material layers on substrate surfaces. Producingpatterned material on a substrate requires controlled methods forremoval of exposed material. Chemical etching is used for a variety ofpurposes including transferring a pattern in photoresist into underlyinglayers, thinning layers, or thinning lateral dimensions of featuresalready present on the surface. Often it is desirable to have an etchprocess that etches one material faster than another facilitating, forexample, a pattern transfer process. Such an etch process is said to beselective to the first material. As a result of the diversity ofmaterials, circuits, and processes, etch processes have been developedwith a selectivity towards a variety of materials.

Etch processes may be termed wet or dry based on the materials used inthe process. A wet HF etch preferentially removes silicon oxide overother dielectrics and materials. However, wet processes may havedifficulty penetrating some constrained trenches and also may sometimesdeform the remaining material. Dry etches produced in local plasmasformed within the substrate processing region can penetrate moreconstrained trenches and exhibit less deformation of delicate remainingstructures. However, local plasmas may damage the substrate through theproduction of electric arcs as they discharge.

Thus, there is a need for improved systems and methods that can be usedto produce high quality devices and structures. These and other needsare addressed by the present technology.

SUMMARY

Systems, chambers, and processes are provided for controlling chamberdegradation due to high voltage plasma. The systems may provideconfigurations for components that allow improved precursordistribution. The chambers may include modified components less likelyto degrade due to exposure to plasma. The methods may provide for thelimiting or prevention of chamber or component degradation as a resultof etching processes performed by system tools.

Exemplary semiconductor processing systems may include a remote plasmasource coupled with a processing chamber having a top plate. An inletassembly may be used to couple the remote plasma source with the topplate and may include a mounting assembly, which in embodiments mayinclude at least two components. The inlet assembly may further includea precursor distribution assembly defining a plurality of distributionchannels fluidly coupled with an injection port.

A first component of the mounting assembly may include an annular gasblock, and a second component of the mounting assembly may include amounting block defining a channel and comprising a first mountingsurface and a second mounting surface opposite the first mountingsurface. In disclosed embodiments, a first section of the channelextending from the first mounting surface may be characterized by afirst diameter. A second section of the channel extending from the firstsection of the channel to the second mounting surface may becharacterized by an increasing diameter from the first section of thechannel to the second mounting surface. In embodiments, the gas blockmay be coupled with a first surface of the precursor distributionassembly, and the mounting block may be coupled with a second surface ofthe precursor distribution assembly opposite the first surface of theprecursor distribution assembly.

In embodiments, the precursor distribution assembly may comprise anannular shape. The precursor distribution assembly may include at leasttwo coupled plates, which at least partially define the plurality ofdistribution channels. A first plate of the at least two coupled platesmay at least partially define a first distribution channel extendingtangentially from a single injection port to at least two secondarydistribution channels. The at least two secondary distribution channelsmay extend tangentially from the first distribution channel to at leasttwo tertiary distribution apertures. A second plate of the at least twocoupled plates may at least partially define a portion of the at leasttwo tertiary distribution apertures. The second plate may further defineat least two tertiary distribution channels extending from the at leasttwo tertiary distribution apertures. The second plate may further defineat least two quaternary distribution channels extending from the atleast two tertiary distribution channels.

Exemplary semiconductor processing systems according to the presenttechnology may include a remote plasma source, and a processing chamberhaving a top plate. The systems may also include an inlet assemblycoupling the remote plasma source with the top plate. The inlet assemblymay include a precursor distribution assembly defining the plurality ofdistribution channels fluidly coupled with a single injection port. Theprecursor distribution assembly may also include at least two annularplates coupled with each other and at least partially defining a centraldistribution channel. A first plate of the at least two annular platesmay define a single injection port and a first distribution channeltangentially extending from the single injection port. The second plateof the at least two annular plates may define at least two secondarydistribution channels in fluid communication with the first distributionchannel and the central distribution channel. The inlet assembly mayfurther include a mounting assembly, and the mounting assembly mayinclude at least two components spatially separated by the precursordistribution assembly. The semiconductor processing systems may alsoinclude a support assembly coupled with the remote plasma source andincluding at least one support extension extending from the supportassembly towards the top plate. The support extension may be separatedfrom the top plate in a first operational position, and the supportextension may be configured to contact the top plate in a secondoperational position engageable during a processing operation.

Etching methods may be performed utilizing any of the disclosedtechnology, and the methods may include generating a plasma with aremote plasma source to create plasma effluents of a first precursor.The methods may also include bypassing the remote plasma source with asecond precursor flowed into a gas distribution assembly. The gasdistribution assembly may be fluidly coupled with the remote plasmasource, such as with a central distribution channel. The methods mayinclude contacting the second precursor with the plasma effluents of thefirst precursor to produce an etching formula. The contacting of theprecursors may occur externally to a processing chamber. The methods mayalso include etching materials on a substrate housed in the processingchamber with the etching formula.

Such technology may provide numerous benefits over conventional systemsand techniques. For example, degradation of chamber components may beprevented or limited due to external plasma generation. An additionaladvantage is that improved etching profiles may be provided based onimproved precursor delivery. These and other embodiments, along withmany of their advantages and features, are described in more detail inconjunction with the below description and attached figures.

BRIEF DESCRIPTION OF THE DRAWINGS

A further understanding of the nature and advantages of the disclosedtechnology may be realized by reference to the remaining portions of thespecification and the drawings.

FIG. 1 shows a top plan view of an exemplary processing system accordingto the present technology.

FIG. 2 shows a schematic cross-sectional view of an exemplary processingchamber according to the present technology.

FIG. 3 shows a schematic cross-sectional view of a portion of anexemplary processing chamber according to the disclosed technology.

FIGS. 4A-B show schematic cross-sectional views of a portion of anexemplary distribution assembly according to the disclosed technology.

FIG. 5 shows a method of etching that may reduce film contaminationaccording to the present technology.

Several of the Figures are included as schematics. It is to beunderstood that the Figures are for illustrative purposes, and are notto be considered of scale unless specifically stated to be as such.

In the appended figures, similar components and/or features may have thesame reference label. Further, various components of the same type maybe distinguished by following the reference label by a letter thatdistinguishes among the similar components. If only the first referencelabel is used in the specification, the description is applicable to anyone of the similar components having the same first reference labelirrespective of the letter.

DETAILED DESCRIPTION

The present technology includes systems and components for semiconductorprocessing. When plasmas are formed in situ in processing chambers, suchas with a capacitively coupled plasma (“CCP”) for example, exposedsurfaces of the chamber may be sputtered or degraded by the plasma orthe species produced by the plasma. This may in part be caused bybombardment to the surfaces or surface coatings by generated plasmaparticles. The extent of the bombardment may itself be related to thevoltage utilized in generating the plasma. For example, higher voltagemay cause higher bombardment, and further degradation.

Conventional technologies have often dealt with this degradation byproviding replaceable components within the chamber. Accordingly, whencoatings or components themselves are degraded, the component may beremoved and replaced with a new component that will in turn degrade overtime. However, the present systems may at least partially overcome orreduce this need to replace components by utilizing external plasmageneration. Remote plasma sources may provide multiple benefits overinternal plasma sources. For example, the remote plasma chamber core maybe coated or composed of material specifically selected based on theplasma being produced. In this way, the remote plasma unit or componentsof the remote plasma unit such as the electrode may be protected toreduce wear and increase system life. Some conventional technologiesutilizing remote plasma systems have reduced operational performance dueto recombination of the plasma effluents based on longer flow paths. Thepresent technology, however, may additionally overcome such issues byutilizing an inlet distribution system that reduces the length of travelfor plasma species, as well as by allowing the generated plasmaeffluents to interact with other precursors nearer to the plasma source.Accordingly, the systems described herein provide improved performanceand cost benefits over many conventional designs. These and otherbenefits will be described in detail below.

Although the remaining disclosure will routinely identify specificetching processes utilizing the disclosed technology, it will be readilyunderstood that the systems and methods are equally applicable todeposition and cleaning processes as may occur in the describedchambers. Accordingly, the technology should not be considered to be solimited as for use with etching processes alone.

FIG. 1 shows a top plan view of one embodiment of a processing system100 of deposition, etching, baking, and curing chambers according toembodiments. The processing tool 100 depicted in FIG. 1 may contain aplurality of process chambers, 114A-D, a transfer chamber 110, a servicechamber 116, an integrated metrology chamber 117, and a pair of loadlock chambers 106A-B. The process chambers may include structures orcomponents similar to those described in relation to FIG. 2, as well asadditional processing chambers.

To transport substrates among the chambers, the transfer chamber 110 maycontain a robotic transport mechanism 113. The transport mechanism 113may have a pair of substrate transport blades 113A attached to thedistal ends of extendible arms 113B, respectively. The blades 113A maybe used for carrying individual substrates to and from the processchambers. In operation, one of the substrate transport blades such asblade 113A of the transport mechanism 113 may retrieve a substrate Wfrom one of the load lock chambers such as chambers 106A-B and carrysubstrate W to a first stage of processing, for example, an etchingprocess as described below in chambers 114A-D. If the chamber isoccupied, the robot may wait until the processing is complete and thenremove the processed substrate from the chamber with one blade 113A andmay insert a new substrate with a second blade (not shown). Once thesubstrate is processed, it may then be moved to a second stage ofprocessing. For each move, the transport mechanism 113 generally mayhave one blade carrying a substrate and one blade empty to execute asubstrate exchange. The transport mechanism 113 may wait at each chamberuntil an exchange can be accomplished.

Once processing is complete within the process chambers, the transportmechanism 113 may move the substrate W from the last process chamber andtransport the substrate W to a cassette within the load lock chambers106A-B. From the load lock chambers 106A-B, the substrate may move intoa factory interface 104. The factory interface 104 generally may operateto transfer substrates between pod loaders 105A-D in an atmosphericpressure clean environment and the load lock chambers 106A-B. The cleanenvironment in factory interface 104 may be generally provided throughair filtration processes, such as HEPA filtration, for example. Factoryinterface 104 may also include a substrate orienter/aligner (not shown)that may be used to properly align the substrates prior to processing.At least one substrate robot, such as robots 108A-B, may be positionedin factory interface 104 to transport substrates between variouspositions/locations within factory interface 104 and to other locationsin communication therewith. Robots 108A-B may be configured to travelalong a track system within enclosure 104 from a first end to a secondend of the factory interface 104.

The processing system 100 may further include an integrated metrologychamber 117 to provide control signals, which may provide adaptivecontrol over any of the processes being performed in the processingchambers. The integrated metrology chamber 117 may include any of avariety of metrological devices to measure various film properties, suchas thickness, roughness, composition, and the metrology devices mayfurther be capable of characterizing grating parameters such as criticaldimensions, sidewall angle, and feature height under vacuum in anautomated manner.

Turning now to FIG. 2 is shown a cross-sectional view of an exemplaryprocess chamber system 200 according to the present technology. Chamber200 may be used, for example, in one or more of the processing chambersections 114 of the system 100 previously discussed Generally, the etchchamber 200 may include a first capacitively-coupled plasma source toimplement an ion milling operation and a second capacitively-coupledplasma source to implement an etching operation and to implement anoptional deposition operation. The chamber 200 may include groundedchamber walls 240 surrounding a chuck 250. In embodiments, the chuck 250may be an electrostatic chuck that clamps the substrate 202 to a topsurface of the chuck 250 during processing, though other clampingmechanisms as would be known may also be utilized. The chuck 250 mayinclude an embedded heat exchanger coil 217. In the exemplaryembodiment, the heat exchanger coil 217 includes one or more heattransfer fluid channels through which heat transfer fluid, such as anethylene glycol/water mix, may be passed to control the temperature ofthe chuck 250 and ultimately the temperature of the substrate 202.

The chuck 250 may include a mesh 249 coupled to a high voltage DC supply248 so that the mesh 249 may carry a DC bias potential to implement theelectrostatic clamping of the substrate 202. The chuck 250 may becoupled with a first RF power source and in one such embodiment, themesh 249 may be coupled with the first RF power source so that both theDC voltage offset and the RF voltage potentials are coupled across athin dielectric layer on the top surface of the chuck 250. In theillustrative embodiment, the first RF power source may include a firstand second RF generator 252, 253. The RF generators 252, 253 may operateat any industrially utilized frequency, however in the exemplaryembodiment the RF generator 252 may operate at 60 MHz to provideadvantageous directionality. Where a second RF generator 253 is alsoprovided, the exemplary frequency may be 2 MHz.

With the chuck 250 to be RF powered, an RF return path may be providedby a first showerhead 225. The first showerhead 225 may be disposedabove the chuck to distribute a first feed gas into a first chamberregion 284 defined by the first showerhead 225 and the chamber wall 240.As such, the chuck 250 and the first showerhead 225 form a first RFcoupled electrode pair to capacitively energize a first plasma 270 of afirst feed gas within a first chamber region 284. A DC plasma bias, orRF bias, resulting from capacitive coupling of the RF powered chuck maygenerate an ion flux from the first plasma 270 to the substrate 202,e.g., Ar ions where the first feed gas is Ar, to provide an ion millingplasma. The first showerhead 225 may be grounded or alternately coupledwith an RF source 228 having one or more generators operable at afrequency other than that of the chuck 250, e.g., 13.56 MHz or 60 MHz.In the illustrated embodiment the first showerhead 225 may be selectablycoupled to ground or the RF source 228 through the relay 227 which maybe automatically controlled during the etch process, for example by acontroller (not shown). In disclosed embodiments, chamber 200 may notinclude showerhead 225 or dielectric spacer 220, and may instead includeonly baffle 215 and showerhead 210 described further below.

As further illustrated in the figure, the etch chamber 200 may include apump stack capable of high throughput at low process pressures. Inembodiments, at least one turbo molecular pump 265, 266 may be coupledwith the first chamber region 284 through one or more gate valves 260and disposed below the chuck 250, opposite the first showerhead 225. Theturbo molecular pumps 265, 266 may be any commercially available pumpshaving suitable throughput and more particularly may be sizedappropriately to maintain process pressures below or about 10 mTorr orbelow or about 5 mTorr at the desired flow rate of the first feed gas,e.g., 50 to 500 sccm of Ar where argon is the first feedgas. In theembodiment illustrated, the chuck 250 may form part of a pedestal whichis centered between the two turbo pumps 265 and 266, however inalternate configurations chuck 250 may be on a pedestal cantileveredfrom the chamber wall 240 with a single turbo molecular pump having acenter aligned with a center of the chuck 250.

Disposed above the first showerhead 225 may be a second showerhead 210.In one embodiment, during processing, the first feed gas source, forexample, Argon delivered from gas distribution system 290 may be coupledwith a gas inlet 276, and the first feed gas flowed through a pluralityof apertures 280 extending through second showerhead 210, into thesecond chamber region 281, and through a plurality of apertures 282extending through the first showerhead 225 into the first chamber region284. An additional flow distributor or baffle 215 having apertures 278may further distribute a first feed gas flow 216 across the diameter ofthe etch chamber 200 through a distribution region 218. In an alternateembodiment, the first feed gas may be flowed directly into the firstchamber region 284 via apertures 283 which are isolated from the secondchamber region 281 as denoted by dashed line 223.

Chamber 200 may additionally be reconfigured from the state illustratedto perform an etching operation. A secondary electrode 205 may bedisposed above the first showerhead 225 with a second chamber region 281there between. The secondary electrode 205 may further form a lid or topplate of the etch chamber 200. The secondary electrode 205 and the firstshowerhead 225 may be electrically isolated by a dielectric ring 220 andform a second RF coupled electrode pair to capacitively discharge asecond plasma 292 of a second feed gas within the second chamber region281. Advantageously, the second plasma 292 may not provide a significantRF bias potential on the chuck 250. At least one electrode of the secondRF coupled electrode pair may be coupled with an RF source forenergizing an etching plasma. The secondary electrode 205 may beelectrically coupled with the second showerhead 210. In an exemplaryembodiment, the first showerhead 225 may be coupled with a ground planeor floating and may be coupled to ground through a relay 227 allowingthe first showerhead 225 to also be powered by the RF power source 228during the ion milling mode of operation. Where the first showerhead 225is grounded, an RF power source 208, having one or more RF generatorsoperating at 13.56 MHz or 60 MHz, for example, may be coupled with thesecondary electrode 205 through a relay 207 which may allow thesecondary electrode 205 to also be grounded during other operationalmodes, such as during an ion milling operation, although the secondaryelectrode 205 may also be left floating if the first showerhead 225 ispowered.

A second feed gas source, such as nitrogen trifluoride, and a hydrogensource, such as ammonia, may be delivered from gas distribution system290, and coupled with the gas inlet 276 such as via dashed line 224. Inthis mode, the second feed gas may flow through the second showerhead210 and may be energized in the second chamber region 281. Reactivespecies may then pass into the first chamber region 284 to react withthe substrate 202. As further illustrated, for embodiments where thefirst showerhead 225 is a multi-channel showerhead, one or more feedgases may be provided to react with the reactive species generated bythe second plasma 292. In one such embodiment, a water source may becoupled with the plurality of apertures 283.

In an embodiment, the chuck 250 may be movable along the distance H2 ina direction normal to the first showerhead 225. The chuck 250 may be onan actuated mechanism surrounded by a bellows 255, or the like, to allowthe chuck 250 to move closer to or farther from the first showerhead 225as a means of controlling heat transfer between the chuck 250 and thefirst showerhead 225, which may be at an elevated temperature of 80°C.-150° C., or more. As such, an etch process may be implemented bymoving the chuck 250 between first and second predetermined positionsrelative to the first showerhead 225. Alternatively, the chuck 250 mayinclude a lifter 251 to elevate the substrate 202 off a top surface ofthe chuck 250 by distance H1 to control heating by the first showerhead225 during the etch process. In other embodiments, where the etchprocess is performed at a fixed temperature such as about 90-110° C. forexample, chuck displacement mechanisms may be avoided. A systemcontroller (not shown) may alternately energize the first and secondplasmas 270 and 292 during the etching process by alternately poweringthe first and second RF coupled electrode pairs automatically.

The chamber 200 may also be reconfigured to perform a depositionoperation. A plasma 292 may be generated in the second chamber region281 by an RF discharge which may be implemented in any of the mannersdescribed for the second plasma 292. Where the first showerhead 225 ispowered to generate the plasma 292 during a deposition, the firstshowerhead 225 may be isolated from a grounded chamber wall 240 by adielectric spacer 230 so as to be electrically floating relative to thechamber wall. In the exemplary embodiment, an oxidizer feed gas source,such as molecular oxygen, may be delivered from gas distribution system290, and coupled with the gas inlet 276. In embodiments where the firstshowerhead 225 is a multi-channel showerhead, any silicon-containingprecursor, such as OMCTS for example, may be delivered from gasdistribution system 290, and directed into the first chamber region 284to react with reactive species passing through the first showerhead 225from the plasma 292. Alternatively the silicon-containing precursor mayalso be flowed through the gas inlet 276 along with the oxidizer.

FIG. 3 shows a schematic cross-sectional view of a portion of anexemplary processing system 300 according to the disclosed technology.As illustrated, system 300 includes a more detailed view of an exemplaryversion of a top portion and related components of, for example, system200 as previously described. System 300 includes a variety of componentsthat may be utilized to deliver precursors to a processing chamber 307through top plate 310, which may be similar in aspects to top plate orcover 205 as previously described. Semiconductor processing system 300may include remote plasma source 305 that may be configured to produceplasma effluents external to processing chamber 307. Plasma effluentsproduced in remote plasma source 305 may include a variety of reactiveand nonreactive species that may include one or more precursorsincluding argon, helium, hydrogen, nitrogen, and additional inert orreactive precursors. Once generated by remote plasma source 305, theeffluents may be delivered to the processing chamber through an inletassembly coupling the remote plasma source with the top plate 310 of thesemiconductor processing chamber 307.

The inlet assembly may include a mounting assembly which may have atleast two components in disclosed embodiments. A first component of anexemplary mounting assembly may include a gas block 315 which at leastpartially defines a central distribution channel 303 through whichplasma effluents and/or precursors may be delivered to processingchamber 307. Gas block 315 may be annular in shape and may includeextended support sections 317 that may provide both an increased matingplatform as well as improved structural support for a larger powersupply such as remote plasma source 305. A second component of themounting assembly may include mounting block 325 further defining atleast a portion of the central distribution channel 303 of the inletassembly. Mounting block 325 may include a first mounting surface 326and a second mounting surface 327 opposite the first mounting surface326. In embodiments, mounting block 325 may also include extendedsupport sections 328 providing both an increased mating platform as wellas improved structural support.

Portions of mounting block 325 may define multiple sections of centraldistribution channel 303, and may define similar or different shapes ofthe channel from each other. For example, a first section 330 ofmounting block 325 may define a first section of the centraldistribution channel 303 extending from the first mounting surface 326to an intermediate portion of mounting block 325. In embodiments thefirst section 330 of mounting block 325 may be characterized by acylindrical shape, or the section may be characterized by a firstdiameter. A second section 335 of mounting block 325 may becharacterized by a similar or different shape than first section 330 ofmounting block 325. In embodiments, second section 335 of mounting block325 may define a second section of central distribution channel 303extending from the intermediate portion of mounting block 325 to thesecond mounting surface 327. Second section 335 of mounting block 325may be characterized by a conical shape, or may be characterized by anincreasing diameter at least partially along the intermediate portion ofmounting block 325 to the second mounting surface 327.

The inlet assembly coupling the remote plasma source with the top plate310 may further include a precursor distribution assembly 320 defining aplurality of distribution channels fluidly coupled with an injectionport 322, which may be a single injection port in disclosed embodiments.As illustrated, injection port 322 may be fluidly coupled with aprecursor injection line 324 configured to provide precursors which maybypass remote plasma source 305. Precursor distribution assembly 320will be discussed in greater detail below with reference to FIGS. 4A-4B.Precursor distribution assembly 320 may include a first surface 321which may be coupled with gas block 315. Precursor distribution assembly320 may further include a second surface 323 opposite first surface 321and coupled with mounting block 325. In this way, the two components ofthe mounting assembly may be spatially separated by the precursordistribution assembly 320.

Mounting block 325 may be coupled with processing chamber 307 in avariety of ways, one embodiment of which is illustrated in FIG. 3. Topplate 310 may include a first surface 309 in which an opening 312 isdefined. Top plate 310 may also include a second surface 311 oppositethe first surface 309. Opening 312 may be defined in top plate 310 fromupper surface 309 to a lower surface 314 of opening 312. Top plate 310may further define a plurality of outlet distribution channels 316defined from the lower surface 314 of opening 312 to the second surface311 of top plate 310, providing fluid communication with processingchamber 307. Outlet distribution channels 316 may be distributed throughtop plate 310 in a variety of patterns and may be configured to providea more uniform flow into processing chamber 307. Within opening 312, topplate 310 may further define a ledge 313 on which mounting block 325 maybe seated. Within ledge 313 one or more o-rings 340 may be included toprovide a seal between the inlet assembly via mounting block 325 andchamber 307 via top plate 310.

Many conventional power supplies utilized in plasma generation mayprovide power down below 100 kHz, 10 kHz, or less. Such power suppliesoften have a smaller footprint along with a lower weight of theelectrical source itself. Modifying the system to accommodate the remoteplasma source 305 may require significant modifications to the inletassembly to accommodate not only the larger size, but also the increasedweight of the supply itself. Embodiments of the present technology maybe specifically configured to accommodate such a remote plasma source aswill be described in detail herein.

In order to accommodate the increased size and weight of thehigh-frequency electrical source 305, semiconductor processing system300 may further include support assembly 350 in order to properlybalance and support remote plasma source 305. The support assembly 350may include any number of mounting plates or other structural devices inorder to provide such balance and support. Support assembly 350 coupledwith the remote plasma source 305 may additionally include floatingsupports 355 that may provide further support in stabilization duringsystem operation. In embodiments the support assembly may include atleast one, e.g. 1, 2, 3, 4, 8, 12, 20, etc. or more, support extension355 extending from the support assembly 350 towards top plate 310.Support extensions 355 may include a variety of shapes configured forbearing the weight of remote plasma source 305, and as illustrated inFIG. 3, may include an S-shape in disclosed embodiments.

Support extensions 355 may be separated from top plate 310 in a firstoperational position in disclosed embodiments. Such a first operationalposition is illustrated in FIG. 3 and shows a gap between the supportextensions 355 and top plate 310. Although illustrated as a defined gapin FIG. 3, it is to be understood that the first operational positionmay include any degree of spacing between the support extensions 355 andtop plate 310 including a first degree of contact between thestructures. Support extensions 355 may be utilized and configured tocontact top plate 310 in a second operational position engageable duringa processing operation.

As previously discussed, o-rings 340 may be used in the coupling ofmounting block 325 with top plate 310, and may aid in reducing leakageduring operation, which may occur under vacuum conditions. Compressionof o-rings 340 may occur both from vacuum conditions as well as from theweight of remote plasma source 305. In such case, o-rings 340 maycompress to an extent to allow support extensions 355 to engage topplate 310 of chamber 307 in the discussed second operational position.In a situation in which support extensions 355 contact top plate 310 inthe first operational position, the second operational position may bedifferentiated from the first operational position by a second degree ofcontact between the support extensions 355 and top plate 310. In such asituation the second degree of contact may be greater or at a higherforce than the first degree of contact, and may be due at least in partto vacuum conditions enacted during a processing operation. Supportextensions 355 may then in turn reduce strain on the inlet assemblycomponents as well as aid in reducing vibration during operation.

Turning to FIGS. 4A and 4B, shown are schematic cross-sectional views ofa portion of an exemplary precursor distribution assembly 400 accordingto the disclosed technology, which includes a detailed view of anembodiment of precursor distribution assembly 320 previously described.As illustrated in FIGS. 4A-4B, the precursor distribution assembly 400may include one or more plates, such as two plates 405, 450 asillustrated, and may include an annular shape defining at least aportion of the central distribution channel. In embodiments theprecursor distribution assembly 400 may include up to or more than 1, 2,3, 4, 5, 7, 10, etc. or more plates coupled together to produce theprecursor distribution assembly 400. As illustrated, the figures show aview of the precursor distribution assembly from the position of aremote plasma source, such as remote plasma source 305 previouslydescribed, and including a view of outlet distribution channels 498, orin disclosed embodiments apertures of a baffle plate or showerheadincluded within a processing chamber. In disclosed embodiments theprecursor distribution assembly 400 may include at least two coupledplates, which at least partially define a plurality of distributionchannels as will be described below.

FIG. 4A illustrates a view of a first plate 405 which may be locatedproximate a gas block, such as gas block 315 previously described. Firstplate 405 may be annular in shape including an inner diameter 407 and anouter diameter 408. First plate 405 may additionally define at least aportion of a central distribution channel 409 which may be similar tothe central distribution channel 303 previously described. In disclosedembodiments first plate 405 may be characterized by shapes other than anannular shape.

First plate 405 may define an inlet port 410, which may be similar tothe precursor injection port 322 previously described. Inlet port 410may provide access to a fluid delivery channel 412 also defined in firstplate 405. When coupled with a precursor source, such a configurationmay provide a way in which the precursor may be distributed to aprocessing chamber while bypassing a remote plasma source. Deliverychannel 412 may be fluidly coupled with a first distribution channel 415defined between the inner diameter 407 and outer diameter 408, andextending tangentially from delivery channel 412 and injection port 410.First distribution channel 415 may at least partially extend about aninterior circumference of first plate 405. In embodiments firstdistribution channel 415 extends bidirectionally about such acircumference from delivery channel 412, and may extend up to a fullcircumference of the interior circumference. As illustrated in FIG. 4A,first distribution channel 415 may extend partially about the interiorcircumference, and may extend up to about 25%, about 50%, about 75%, orany other percent up to 100% of the full circumference. In embodimentsfirst distribution channel 415 may extend about 50% of an interiorcircumference, or about 25% in each direction from delivery channel 412,before extending to at least two secondary distribution channels 420,430.

Secondary distribution channels 420, 430 may extend in a similar ordifferent fashion than the first distribution channel 415 from deliverychannel 412. As illustrated, secondary distribution channels 420, 430may extend bidirectionally from distal portions of first distributionchannel 415 about a second interior circumference of first plate 405that is smaller than the first interior circumference. Secondarydistribution channels 420, 430 may extend partially about the secondinterior circumference, and may extend up to about 25%, about 50%, about75%, or any other percent up to 100% of the full second interiorcircumference. In one embodiment as illustrated in FIG. 4A, secondarydistribution channels 420, 430 each extend less than about 30% of thefull circumference of the second interior circumference.

Each secondary distribution channel 420, 430 may extend about the secondinterior circumference to two positions, such as positions 422, 424 asillustrated for second distribution channel 420. The secondarydistribution channels may extend tangentially from first distributionchannel 415 to at least two tertiary distribution apertures, such asapertures 425A, 427A as illustrated in FIG. 4A for secondarydistribution channel 420. The tertiary distribution apertures may belocated at distal portions of the secondary distribution channels, andmay be proximate the end positions, such as proximate positions 422, 424as illustrated. The tertiary distribution apertures may be at leastpartially defined by top plate 405, and may provide access to secondplate 450. Although circumference is used in reference to a generallycircular shape, it is understood that alternative geometries may be usedfor the distribution channels, and circumference may generally refer toa perimeter of such geometries.

FIG. 4B illustrates a view of a second plate 450 which may be locatedproximate a mounting block, such as mounting block 325 previouslydescribed. Second plate 450 may be annular in shape including an innerdiameter 452 and an outer diameter 454. Second plate 450 mayadditionally define at least a portion of a central distribution channel456 which may be similar to the central distribution channel 303previously described. In disclosed embodiments second plate 450 may becharacterized by shapes other than an annular shape.

Second plate 450 may at least partially define a portion of at least twotertiary distribution apertures 425B, 427B, which may provide fluidcommunication between first plate 405 and second plate 450 via thecoupled tertiary distribution apertures, which may be partially definedby each plate. Second plate 450 may also at least partially define atleast two tertiary distribution channels extending from the at least twotertiary distribution apertures. As illustrated in FIG. 4B, fourtertiary distribution channels 432, 434, 436, 438 are illustratedextending into a third interior circumference that may be equal to,greater than, or less than the second interior circumference. Eachtertiary distribution channel may extend bidirectionally from a tertiarydistribution aperture about the third interior circumference. Eachtertiary distribution channel may extend partially about the thirdinterior circumference, and may extend up to about 25%, about 50%, about75%, or any other percent up to 100% of the full third interiorcircumference. In disclosed embodiments, each tertiary distributionchannel extends less than about 25% of the third interior circumference,

Second plate 450 may further define at least two quaternary distributionchannels extending from the at least two tertiary distribution channels.As illustrated in FIG. 4B, second plate 450 defines at least onequaternary distribution channel 440 extending from each tertiarydistribution channel, and in embodiments a plurality of quaternarydistribution channels 440 extend from each tertiary distributionchannel. Quaternary distribution channels 440 may extend to innerdiameter 452 and provide access to the at least partially definedcentral distribution channel 456. Accordingly, as illustrated in the twoschematics the precursor distribution assembly 400 may define aplurality of distribution channels fluidly coupled with a singleinjection port, where the precursor distribution assembly includes atleast two annular plates coupled with each other and at least partiallydefining a central distribution channel.

A first plate of the at least two annular plates may define a fluidinjection port as well as a first distribution channel tangentiallyextending from this injection port. A second plate of the at least twoannular plates defines at least two secondary distribution channels,such as the tertiary and quaternary distribution channels discussed,where the secondary distribution channels are in fluid communicationwith the first distribution channel and the central distribution channelto provide an injected fluid substantially uniformly to the centraldistribution channel. This distribution configuration may provide anumber of benefits over conventional schemes. For example, precursormixing between a radicalized precursor provided by a remote plasmasource and a non-radicalized precursor provided through the injectionport of the precursor distribution assembly may occur prior to theprecursors entering the processing chamber. In this way, lessrecombination may occur from the radicalized species because of theshorter flow path provided by this design. Additionally, the precursordistribution assembly may provide improved and more uniform interactionbetween the precursors based on the distribution channels within theprecursor distribution assembly providing the injected precursor moreuniformly across the central distribution channel.

FIG. 5 shows a method 500 of etching that may reduce film contaminationand provide more uniform precursor distribution according to the presenttechnology. Method 500 may be performed in any of the systems previouslydescribed and may include optional operations including delivering aprecursor for ionization to a remote plasma source. Method 500 mayinclude generating a plasma within a remote plasma source to createplasma effluents of the first precursor in operation 510. The remoteplasma source may operate in a variety of plasma powers including up to1000 Watts, 6000 Watts, 8000 Watts, 10,000 Watts, etc. or more. Method500 may further include bypassing the remote plasma source with a secondprecursor flowed into a gas distribution assembly at operation 520. Thegas distribution assembly may be fluidly coupled with a remote plasmasource, such as via a central distribution channel.

Method 500 may also include contacting the second precursor with theplasma effluents of the first precursor to produce an etching formula atoperation 530. Contacting the precursors may occur externally to aprocessing chamber in which the etching may be performed, such as in thecentral distribution channel. At operation 540, after allowing theprecursors to interact, the etching formula may be flowed into aprocessing chamber in which a substrate may be housed, and materials onthe substrate may be etched with the etching formula. By forming theplasma and plasma effluents externally to the processing chamber,degradation of chamber components or coatings may be reduced orprevented in embodiments. The sputtered particles may be carried throughthe system and deposited on the substrate being worked, which may resultin short-circuiting or failure of the produced device. Accordingly, byutilizing the described methods increased device quality may be providedas well as increased chamber component life. Additionally, by utilizinga gas distribution assembly or precursor distribution assembly, such asthose discussed previously, the methods may provide a more uniformdistribution of the etching formula due to improved interaction andmixing provided in the central distribution channel. Consequently, moreuniform etching may be performed on materials on the substrate, whichmay improve overall device quality.

In the preceding description, for the purposes of explanation, numerousdetails have been set forth in order to provide an understanding ofvarious embodiments of the present technology. It will be apparent toone skilled in the art, however, that certain embodiments may bepracticed without some of these details, or with additional details.

Having disclosed several embodiments, it will be recognized by those ofskill in the art that various modifications, alternative constructions,and equivalents may be used without departing from the spirit of theembodiments. Additionally, a number of well-known processes and elementshave not been described in order to avoid unnecessarily obscuring thepresent technology. Accordingly, the above description should not betaken as limiting the scope of the technology.

Where a range of values is provided, it is understood that eachintervening value, to the smallest fraction of the unit of the lowerlimit, unless the context clearly dictates otherwise, between the upperand lower limits of that range is also specifically disclosed. Anynarrower range between any stated values or unstated intervening valuesin a stated range and any other stated or intervening value in thatstated range is encompassed. The upper and lower limits of those smallerranges may independently be included or excluded in the range, and eachrange where either, neither, or both limits are included in the smallerranges is also encompassed within the technology, subject to anyspecifically excluded limit in the stated range. Where the stated rangeincludes one or both of the limits, ranges excluding either or both ofthose included limits are also included.

As used herein and in the appended claims, the singular forms “a”, “an”,and “the” include plural references unless the context clearly dictatesotherwise. Thus, for example, reference to “an aperture” includes aplurality of such apertures, and reference to “the plate” includesreference to one or more plates and equivalents thereof known to thoseskilled in the art, and so forth.

Also, the words “comprise(s)”, “comprising”, “contain(s)”, “containing”,“include(s)”, and “including”, when used in this specification and inthe following claims, are intended to specify the presence of statedfeatures, integers, components, or operations, but they do not precludethe presence or addition of one or more other features, integers,components, operations, acts, or groups.

The invention claimed is:
 1. A semiconductor processing systemcomprising: a remote plasma source; a processing chamber having a topplate having a first surface, and defining a recess within the firstsurface; and an inlet assembly coupling the remote plasma source withthe top plate and comprising: a precursor distribution assembly defininga plurality of distribution channels fluidly coupled with an injectionport, and a mounting assembly comprising: a gas block coupled betweenthe remote plasma source and the precursor distribution assembly, and amounting block coupled between the precursor distribution assembly andthe top plate, wherein the mounting block extends past the first surfaceof the top plate to couple with the top plate within the recess.
 2. Thesemiconductor processing system of claim 1, wherein the mounting blockdefines a channel and comprises a first mounting surface and a secondmounting surface opposite the first mounting surface.
 3. Thesemiconductor processing system of claim 2, wherein a first section ofthe channel extending from the first mounting surface is characterizedby a first diameter.
 4. The semiconductor processing system of claim 3,wherein a second section of the channel extending from the first sectionof the channel to the second mounting surface is characterized by anincreasing diameter at least partially along the first section of thechannel towards the second mounting surface.
 5. The semiconductorprocessing system of claim 2, wherein the gas block is coupled with afirst surface of the precursor distribution assembly and the mountingblock is coupled with a second surface of the precursor distributionassembly opposite the first surface of the precursor distributionassembly.
 6. The semiconductor processing system of claim 1, wherein theprecursor distribution assembly comprises an annular shape.
 7. Thesemiconductor processing system of claim 1, wherein the precursordistribution assembly comprises at least two coupled plates, which atleast partially define the plurality of distribution channels.
 8. Thesemiconductor processing system of claim 7, wherein a first plate of theat least two coupled plates at least partially defines a firstdistribution channel extending tangentially from the injection port toat least two secondary distribution channels.
 9. The semiconductorprocessing system of claim 8, wherein the at least two secondarydistribution channels extend tangentially from the first distributionchannel to at least two tertiary distribution apertures.
 10. Thesemiconductor processing system of claim 9, wherein a second plate ofthe at least two coupled plates at least partially defines a portion ofthe at least two tertiary distribution apertures, and wherein the secondplate further defines at least two tertiary distribution channelsextending from the at least two tertiary distribution apertures.
 11. Thesemiconductor processing system of claim 10, wherein the second platefurther defines at least two quaternary distribution channels extendingfrom the at least two tertiary distribution channels.
 12. Thesemiconductor processing system of claim 1, wherein the recess extendswithin the top plate past a ledge further defined within the recess bythe top plate, and wherein the mounting block is coupled with the ledge.13. The semiconductor processing system of claim 12, wherein the topplate comprises a second surface opposite the first, wherein the recessis defined at least partially by the first surface of the top plate anda lower recess surface, and wherein a plurality of outlet channels aredefined by the top plate between the lower recess surface and the secondsurface of the top plate.
 14. The semiconductor processing system ofclaim 1, further comprising: a stabilization plate having a firstsurface coupled with the remote plasma source, and a second surfaceopposite the first; and at least one support leg extending from thesecond surface of the stabilization plate towards the top plate.
 15. Thesemiconductor processing system of claim 14, further comprising a gapbetween the at least one support leg and the top plate.
 16. Asemiconductor processing system comprising: a remote plasma source; aprocessing chamber having a top plate; an inlet assembly coupling theremote plasma source with the top plate and comprising: a precursordistribution assembly defining a plurality of distribution channelsfluidly coupled with a single injection port, wherein the precursordistribution assembly comprises at least two annular plates coupled witheach other and at least partially defining a central distributionchannel, wherein a first plate of the at least two annular platesdefines the single injection port and a first distribution channeltangentially extending from the single injection port, and wherein asecond plate of the at least two annular plates defines at least twosecondary distribution channels in fluid communication with the firstdistribution channel and the central distribution channel, and amounting assembly, wherein the mounting assembly comprises at least twocomponents spatially separated by the precursor distribution assembly,wherein the at least two components include a first component positionedbetween and contacting each of the remote plasma source and theprecursor distribution assembly, and a second component positionedbetween and contacting each of the precursor distribution assembly andthe top plate; and a support assembly coupled with the remote plasmasource and including at least one support extension extending from thesupport assembly towards the top plate, wherein the at least one supportextension is separated from the top plate in a first operationalposition, and wherein the at least one support extension is configuredto contact the top plate in a second operational position engageableduring a processing operation.
 17. A semiconductor processing systemcomprising: a remote plasma source; a processing chamber having a topplate defining at least a portion of a central distribution channelextending from the remote plasma source, wherein the centraldistribution channel extends past a first surface of the top plate andis fluidly coupled with a plurality of outlet distribution channelsdefined within the top plate; and an inlet assembly coupling the remoteplasma source with the top plate and comprising: a precursordistribution assembly defining a portion of the central distributionchannel and a plurality of internal channels fluidly coupled with aninjection port, an annular gas block coupled between the remote plasmasource and the precursor distribution assembly, wherein the annular gasblock defines at least a portion of the central distribution channel,and a mounting block coupled between the precursor distribution assemblyand the top plate, wherein the mounting block defines at least a portionof the central distribution channel.